Sample 52

Run Data

	Process	carrier	HBr	Ar	Pressure mT	RF Power	ICP power	Temp	Time (min)	Sample# Res C
17	17	Si wafer - not bonded	18	12	5.5	200	400	20	10	52.0

Post Strip Micrograph

Dektak Pre/Post Resist Strip Comparison

Total depth after etching is 10.316 um
Calculated remaining resist as 7.72um, indicating an erosion of 1.03um in 10 minutes of etching
This equates to an erosion rate of 103 nm/min
The etch depth of 2.60um in 10 mins indicates an etch rate of 260.0nm/min
The selectivity is therefore 2.54:1

	Result
Initial resist (um)	8.741000
Total depth after etch (um)	10.315500
Remaining resist (um)	7.715500
Semiconductor etched(um)	2.600000
Etch rate (nm/min)	260.000000
Erosion rate (nm/min)	102.550000
Selectivity	2.535349